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dc.contributor.authorGomila, G.
dc.contributor.authorRodríguez Cantalapiedra, Inmaculada
dc.date.accessioned2026-07-01T08:01:16Z
dc.date.available2026-07-01T08:01:16Z
dc.date.issued2003
dc.identifier.citationGomila, G. y Rodríguez Cantalapiedra, I. (2003). Electronic transport and noise in ballistic n+-n-n+ semiconductor nanodiodes. Nanotechnology, 14(2), 172-176. https://doi.org/10.1088/0957-4484/14/2/314es
dc.identifier.issn0957-4484
dc.identifier.urihttp://hdl.handle.net/20.500.12251/5656
dc.description.abstractWe present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n+-n-n+ semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.es
dc.language.isoenges
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleElectronic transport and noise in ballistic n+-n-n+ semiconductor nanodiodeses
dc.typearticle
dc.identifier.doi10.1088/0957-4484/14/2/314
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0037293867&partnerID=40&md5=e69d5cabc4afa05aa291e7014cf11b06
dc.issue.number2es
dc.journal.titleNanotechnologyes
dc.page.initial172es
dc.page.final176es
dc.rights.accessRightsopenAccesses
dc.subject.keywordSemiconductoreses
dc.subject.unesco3305 Tecnología de la Construcciónes
dc.subject.unesco2201 Acústicaes
dc.subject.unesco2201.02 Acústica Arquitectónicaes
dc.volume.number14


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