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dc.contributor.authorBonilla, L. L.
dc.contributor.authorBergmann, M. J.
dc.contributor.authorRodríguez Cantalapiedra, Inmaculada
dc.contributor.authorTeitsworth, S. W.
dc.date.accessioned2026-07-01T08:01:31Z
dc.date.available2026-07-01T08:01:31Z
dc.date.issued1993
dc.identifier.citationBonilla, L. L., Bergmann, M. J., Rodríguez Cantalapiedra, I., y Teitsworth, S. W. (1993). Onset of current oscillations in extrinsic semiconductors under DC voltage bias. Semiconductor Science and Technology, 9; Oxford, UK(5), 599-602. http://www.scopus.com/inward/record.url?eid=2-s2.0-0028430090&partnerID=40&md5=aa294060c6180d8d89a1fba9133694ades
dc.identifier.issn0268-1242
dc.identifier.urihttp://hdl.handle.net/20.500.12251/5774
dc.description.abstractWe present a model which describes the onset of current instabilities and space-charge domains in extrinsic semiconductors (especially p-Ge) under DC voltage bias. Just above the onset voltage for current instability we have found numerically small-amplitude fast oscillations due to the periodic motion of solitary waves which decay before reaching the receiving contact. For slightly larger applied voltages there is an abrupt and slightly hysteretic transition to slower large-amplitude solitary waves similar to those in the Gunn effect. An amplitude oscillatory modes that become linearly unstable at onset.es
dc.language.isoenges
dc.publisherPubl by Institute of Physics Publishing Ltdes
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleOnset of current oscillations in extrinsic semiconductors under DC voltage biases
dc.typearticle
dc.identifier.urlhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0028430090&partnerID=40&md5=aa294060c6180d8d89a1fba9133694ad
dc.issue.number5es
dc.journal.titleSemiconductor Science and Technologyes
dc.page.initial599es
dc.page.final602es
dc.rights.accessRightsopenAccesses
dc.subject.keywordSemiconductoreses
dc.subject.unesco3312 Tecnología de Materialeses
dc.subject.unesco2211 Física del Estado Sólidoes
dc.subject.unesco2211.25 Semiconductoreses
dc.volume.number9; Oxford, UK


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
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