| dc.contributor.author | Rodríguez Cantalapiedra, Inmaculada | |
| dc.contributor.author | Bonilla, L. L. | |
| dc.contributor.author | Bergmann, M. J. | |
| dc.contributor.author | Teitsworth, S. W. | |
| dc.date.accessioned | 2026-07-01T08:01:32Z | |
| dc.date.available | 2026-07-01T08:01:32Z | |
| dc.date.issued | 1993 | |
| dc.identifier.citation | Rodríguez Cantalapiedra, I., Bonilla, L. L., Bergmann, M. J., y Teitsworth, S. W. (1993). Solitary-wave dynamics in extrinsic semiconductors under dc voltage bias. Physical Review B - Condensed Matter and Materials Physics, 48(16), 12278-12281. https://doi.org/10.1103/PhysRevB.48.12278 | es |
| dc.identifier.issn | 1098-0121 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12251/5782 | |
| dc.description.abstract | Numerical-simulation results are presented for a simple drift-diffusion model which describes time-dependent and nonlinear electrical transport properties of extrinsic semiconductors under time-independent (dc) voltage bias. Simulations for finite-length samples with Ohmic boundary conditions yield dynamically stable solitary space-charge waves that travel periodically across the sample. Numerical estimates of wave speed, the wave size, and onset phenomena are in excellent agreement with recent experiments in p-type germanium. © 1993 The American Physical Society. | es |
| dc.language.iso | eng | es |
| dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
| dc.title | Solitary-wave dynamics in extrinsic semiconductors under dc voltage bias | es |
| dc.type | article | |
| dc.identifier.doi | 10.1103/PhysRevB.48.12278 | |
| dc.identifier.url | http://www.scopus.com/inward/record.url?eid=2-s2.0-0004901149&partnerID=40&md5=3ebbc7fa44049e74f3dcd20722787a06 | |
| dc.issue.number | 16 | es |
| dc.journal.title | Physical Review B - Condensed Matter and Materials Physics | es |
| dc.page.initial | 12278 | es |
| dc.page.final | 12281 | es |
| dc.rights.accessRights | openAccess | es |
| dc.subject.keyword | Semiconductores | es |
| dc.subject.unesco | 1203.26 Simulación | es |
| dc.subject.unesco | 2211 Física del Estado Sólido | es |
| dc.subject.unesco | 2211.25 Semiconductores | es |
| dc.volume.number | 48 | |
