Electronic transport and noise in ballistic n+-n-n+ semiconductor nanodiodes
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2003Subject/s
Abstract
We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n+-n-n+ semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.
We present a semiclassical kinetic theory for the electronic transport and noise properties of ballistic n+-n-n+ semiconductor nanodiodes. The theory is based on an exact solution of the Vlasov-Langevin kinetic equation self-consistently coupled to the Poisson equation, and takes into account the Pauli exclusion principle. The current-voltage characteristics calculated from the present theory perfectly agree with existing theoretical predictions. Concerning the noise properties, the theory offers the possibility of computing the current noise under all current regimes, thus overcoming the inherent limitations of existing theories.





